The mechanism of generation of donor centres in p-InSb by laser radiation
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Abstract
The laser-induced donor centers in p-InSb have been studied by magneto-concentration effect (MCE). The distribution of In vacancies in a nonuniform temperature field in InSb has been performed in term of the model of redistribution of the In vacancies under laser action. Comparison of the theoretical and experimental data has shown that the depth of the p-n junction increases with temperature and that the relatively large value of the p-n junction localization depth at intensities of laser radiation exceeding 3.5 MW cm-2 is connected with presence of the liquid phase in the laser modification process. These results are confirmed by atomic force microscopy (AFM) of the surface morphology. Experiments were performed on InSb samples in the temperature range 180-290 K. Temperature gradient was provided by YAG:Nd laser illumination (A = 0.53 μm, τp = 15 ns). Two kinds of laser donor centers (LDC) were found: one is nonstable, annealed at room temperature with relaxation constant ∼ 5 s, and the other is stable, annealed at 670 K. The threshold of LDC formation is 1.5 MW cm-2. The activation energy of the stable donor centre is ∼ 1.1 eV.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The mechanism of generation of donor centres in p-InSb by laser radiation</title><author><name sortKey="Medvid, A" uniqKey="Medvid A">A. Medvid</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Riga Technical University, la Kalku Str.</s1><s2>Riga 1658</s2><s3>LVA</s3><sZ>1 aut.</sZ></inist:fA14><country>Lettonie</country><wicri:noRegion>Riga 1658</wicri:noRegion></affiliation></author><author><name sortKey="Fedorenko, L L" uniqKey="Fedorenko L">L. L. Fedorenko</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics NAS of Ukraine, 45, Pr. Nauki</s1><s2>Kiev 252028</s2><s3>UKR</s3><sZ>2 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Kiev 252028</wicri:noRegion></affiliation></author><author><name sortKey="Snitka, V" uniqKey="Snitka V">V. Snitka</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Kaunas University of Technology, RC Vibrotechnika, 65 Studentu g.</s1><s2>Kaunas 3031</s2><s3>LTU</s3><sZ>3 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>Kaunas 3031</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0252777</idno><date when="1999">1999</date><idno type="stanalyst">PASCAL 99-0252777 INIST</idno><idno type="RBID">Pascal:99-0252777</idno><idno type="wicri:Area/Main/Corpus">015128</idno><idno type="wicri:Area/Main/Repository">014768</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Donors</term><term>Electrical conductivity</term><term>Experimental study</term><term>Indium antimonides</term><term>Laser beams</term><term>Morphology</term><term>Physical radiation effects</term><term>Vacancies</term><term>p n junctions</term><term>p-type conductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Donneur</term><term>Semiconducteur type p</term><term>Indium antimoniure</term><term>Effet physique rayonnement</term><term>Faisceau laser</term><term>Morphologie</term><term>Lacune</term><term>Microscopie force atomique</term><term>Jonction p n</term><term>Conductivité électrique</term><term>6180B</term><term>7220F</term><term>InSb</term><term>In Sb</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The laser-induced donor centers in p-InSb have been studied by magneto-concentration effect (MCE). The distribution of In vacancies in a nonuniform temperature field in InSb has been performed in term of the model of redistribution of the In vacancies under laser action. Comparison of the theoretical and experimental data has shown that the depth of the p-n junction increases with temperature and that the relatively large value of the p-n junction localization depth at intensities of laser radiation exceeding 3.5 MW cm<sup>-2</sup> is connected with presence of the liquid phase in the laser modification process. These results are confirmed by atomic force microscopy (AFM) of the surface morphology. Experiments were performed on InSb samples in the temperature range 180-290 K. Temperature gradient was provided by YAG:Nd laser illumination (A = 0.53 μm, τ<sub>p</sub> = 15 ns). Two kinds of laser donor centers (LDC) were found: one is nonstable, annealed at room temperature with relaxation constant ∼ 5 s, and the other is stable, annealed at 670 K. The threshold of LDC formation is 1.5 MW cm<sup>-2</sup>. The activation energy of the stable donor centre is ∼ 1.1 eV.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA02 i1="01"><s0>ASUSEE</s0></fA02><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>142</s2></fA05><fA06><s2>1-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The mechanism of generation of donor centres in p-InSb by laser radiation</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the Ninth International Conference on Solid Films and Surfaces, Copenhagen, Denmark, July 6-10, 1998</s1></fA09><fA11 i1="01" i2="1"><s1>MEDVID (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>FEDORENKO (L. L.)</s1></fA11><fA11 i1="03" i2="1"><s1>SNITKA (V.)</s1></fA11><fA12 i1="01" i2="1"><s1>MØLLER (Preben Juul)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>FEIDENHANS'L (Robert)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>ADAMS (David L.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Riga Technical University, la Kalku Str.</s1><s2>Riga 1658</s2><s3>LVA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Semiconductor Physics NAS of Ukraine, 45, Pr. Nauki</s1><s2>Kiev 252028</s2><s3>UKR</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Kaunas University of Technology, RC Vibrotechnika, 65 Studentu g.</s1><s2>Kaunas 3031</s2><s3>LTU</s3><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>University of Copenhagen</s1><s3>DNK</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Risø National Laboratory</s1><s3>DNK</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Aarhus University</s1><s3>DNK</s3><sZ>3 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>Carlsberg Foundation</s1><s3>INC</s3><s9>patr.</s9></fA18><fA18 i1="02" i2="1"><s1>Danish Technical Science Research Council</s1><s3>DNK</s3><s9>patr.</s9></fA18><fA18 i1="03" i2="1"><s1>European Commission. Commission of Science and Technology</s1><s3>EUR</s3><s9>patr.</s9></fA18><fA18 i1="04" i2="1"><s1>Hede Nielsen Foundation</s1><s3>INC</s3><s9>patr.</s9></fA18><fA18 i1="05" i2="1"><s1>Ninoka Foundation</s1><s3>INC</s3><s9>patr.</s9></fA18><fA18 i1="06" i2="1"><s1>Danish Chemical Society</s1><s3>DNK</s3><s9>patr.</s9></fA18><fA18 i1="07" i2="1"><s1>Danish Engineering Society</s1><s3>DNK</s3><s9>patr.</s9></fA18><fA20><s1>280-285</s1></fA20><fA21><s1>1999</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000084300440530</s5></fA43><fA44><s0>0000</s0><s1>© 1999 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>99-0252777</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The laser-induced donor centers in p-InSb have been studied by magneto-concentration effect (MCE). The distribution of In vacancies in a nonuniform temperature field in InSb has been performed in term of the model of redistribution of the In vacancies under laser action. Comparison of the theoretical and experimental data has shown that the depth of the p-n junction increases with temperature and that the relatively large value of the p-n junction localization depth at intensities of laser radiation exceeding 3.5 MW cm<sup>-2</sup> is connected with presence of the liquid phase in the laser modification process. These results are confirmed by atomic force microscopy (AFM) of the surface morphology. Experiments were performed on InSb samples in the temperature range 180-290 K. Temperature gradient was provided by YAG:Nd laser illumination (A = 0.53 μm, τ<sub>p</sub> = 15 ns). Two kinds of laser donor centers (LDC) were found: one is nonstable, annealed at room temperature with relaxation constant ∼ 5 s, and the other is stable, annealed at 670 K. The threshold of LDC formation is 1.5 MW cm<sup>-2</sup>. The activation energy of the stable donor centre is ∼ 1.1 eV.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A80B</s0></fC02><fC02 i1="02" i2="3"><s0>001B70B20F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Donneur</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Donors</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur type p</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>p-type conductors</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium antimoniure</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Effet physique rayonnement</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Physical radiation effects</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Faisceau laser</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Laser beams</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Morphologie</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Morphology</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Lacune</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Vacancies</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Jonction p n</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>p n junctions</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>6180B</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>7220F</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InSb</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>In Sb</s0><s4>INC</s4><s5>93</s5></fC03><fN21><s1>158</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ICSFS-9: International Conference on Solid Films and Surfaces</s1><s2>9</s2><s3>Copenhagen DNK</s3><s4>1998-07-06</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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